Yuezhang (Edward) Zou

PhD Student (5th year), Electrical and Computer Engineering

Bio

Yuezhang Zou received the B.E. degree in electronics information science and technology from Harbin Institute of Technology, Harbin, China, in 2017. He received the M.S. degree in electrical and computer engineering at Carnegie Mellon University, Pittsburgh, PA, USA, in 2020. Yuezhang is currently pursuing his doctoral studies in electrical and computer engineering.

For more information, please see his LinkedIn page.

Research

Yuezhang's current interests are in emerging non-volatile memory devices modeling, fabrication and characterization. His specific focus has been on the oxide/chalcogenide based S-NDR threshold switching devices for memory selector and compute-in-memory applications. His research projects include developing an impact ionization based physical model to understand S-NDR characteristics, developing a fabrication process flow to create100-nm selector devices, and testing the behavior and property of the fabricated devices.

Publications

Yuezhang Zou, Darshil K. Gala, and James A. Bain, “Impact ionization model for S-NDR based threshold switching devices”, 77th Device Research Conference, 2019